Neon Ion Beam Lithography (NIBL).

Sub-10-nm lithography with light-ion beams

Scanning-electron-beam lithography (SEBL) is the workhorse of nanoscale lithography in part because of the high brightness of the Schottky source of electrons, but also benefiting from decades of incremental innovation and engineering of apparatus around the Schottky source. Light ions are an attractive intermediary between electrons and heavy ions in terms of exposure efficiency and resolution...

Nanosphere photolithography for sub-100nm features

Microfabrication is commonly achieved via interactions of light and a photoresist (an optically sensitive material). In this process, the light is shaped into the desired pattern by a mask and projected onto the photoresist. The entire photoresist sample is then submerged within a developer, which dissolves the exposed photoresist and leaves the unexposed photoresist intact. Mask patterns can t...

Focused Ion Beam Lithography

Computer Simulation of Processes at Electron and Ion Beam Lithography, Part 2: Simulation of Resist Developed Images at Electron and Ion Beam Lithography

Computer Simulation of Electron and Ion Beam Lithography of Nanostructures

In this paper a review of the authors results on mathematical modeling of the processes at electron or ion beam lithography of nanostructures is presented. Our Monte Carlo simulation tools for electron and ion exposures are successfully applied for the energy deposition calculation at electron or ion lithography of resist layers. At ion lithography electronic energy losses of penetrating electr...